Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6A60D(STA4,Q,M) TK6A60D(STA4,Q,M)

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 777949-TK6A60D(STA4, Q,M) Series: π-MOSVII Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Family Name: TK6A60D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220SIS Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 800pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 40W (Tc) Rds On (Maximum) @ Id, Vgs: 1.25 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): RDX060N60; R6006ANX; STP6NC60FP; STF6N65K3(045Y); Introduction Date: September 16, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 777949-TK6A60D(STA4, Q,M) Series: π-MOSVII Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Family Name: TK6A60D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220SIS Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 800pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 40W (Tc) Rds On (Maximum) @ Id, Vgs: 1.25 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): RDX060N60; R6006ANX; STP6NC60FP; STF6N65K3(045Y); Introduction Date: September 16, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6A60D(STA4,Q,M) - 777949-TK6A60D(STA4,Q,M) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6A60D(STA4,Q,M)
777949-TK6A60D(STA4,Q,M)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6A60D(STA4,Q,M) 777949-TK6A60D(STA4,Q,M)
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 777949-TK6A60D(STA4, Q,M) Series: π-MOSVII Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Family Name: TK6A60D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220SIS Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 800pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 40W (Tc) Rds On (Maximum) @ Id, Vgs: 1.25 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): RDX060N60; R6006ANX; STP6NC60FP; STF6N65K3(045Y); Introduction Date: September 16, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 777949-TK6A60D(STA4,Q,M)
Series: π-MOSVII
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Family Name: TK6A60D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220SIS
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 800pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 40W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
Alternative Parts (Cross-Reference): RDX060N60; R6006ANX; STP6NC60FP; STF6N65K3(045Y);
Introduction Date: September 16, 2008
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
600V 6A MOSFET Transistor
278-TK6A60D(STA4,Q,M)
600V 6A MOSFET Transistor 278-TK6A60D(STA4,Q,M)
MOSFET N-CH 600V 6A TO220SIS Product overview: TK6A60D(STA4,Q,M) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK6A60D(STA4,Q,M ) can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 6A TO220SIS Product overview: TK6A60D(STA4,Q,M) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK6A60D(STA4,Q,M) can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - TK6A60D(STA4,Q,M) - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TK6A60D(STA4,Q,M)
Single FETs, MOSFETs TK6A60D(STA4,Q,M)
MOSFET N-CH 600V 6A TO220SIS

MOSFET N-CH 600V 6A TO220SIS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK6A60D(STA4,Q,M) - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TK6A60D(STA4,Q,M)
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TK6A60D(STA4,Q,M)
MOSFET N-CH 600V 6A TO220SIS

MOSFET N-CH 600V 6A TO220SIS

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 777949-TK6A60D(STA4,Q,M) 278-TK6A60D(STA4,Q,M) TK6A60D(STA4,Q,M) TK6A60D(STA4,Q,M)
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6A60D(STA4,Q,M) 600V 6A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 40000 milliwatts 40000 milliwatts 40000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
Package Type TO-220; SOT3 Tube TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
Packing Method Tube; Tube Tube Tube; Tube
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