Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK65E10N1 TK65E10N1

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212910-TK65E10N1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 192W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 148A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 81nC @ 10V
Max Input Capacitance: 5400pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 32.5A, 10V
Alternative Parts (Cross-Reference): IPP06CN10LGXKSA1; BUK956R1-100E; TK65E10N1,S1X;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

MOSFET N CH 100V 148A TO220 Product overview: TK65E10N1 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 148A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 148A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK65E10N1 can be used for catalog matching and distributor lookup.