MOSFET N-CH 600V 11A TO220SIS Product overview: TK650A60F,S4X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK650A60F,S4X can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 936572-TK650A60F,S4X
Series: U-MOSIX
Operating Temperature Range: 150°C
Features: N-Channel 600 V 11A (Ta) 45W (Tc) Through Hole TO-220SIS
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: TK650A60
Categories: Discrete Semiconductor Products
Case / Package: TO-220SIS
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: Not Applicable
Estimated Pruduction Lead Time: 11 Weeks
HTSUS: 8541.29.0095
Other Part Number: TK650A60F,S4X(S, TK650A60FS4X, TK650A60FS4X(S
N-Channel 600V 11A (Ta) 45W (Tc) Through Hole TO-220SIS
MOSFET N-CH 600V 11A TO220SIS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-TK650A60F,S4X | 936572-TK650A60F,S4X | TK650A60FS4X-ND | TK650A60F,S4X |
| Product Name | 600V 11A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK650A60F,S4X | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 600 volts | |||
| PD | 45 milliwatts |