Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK60E08K3,S1X TK60E08K3,S1X

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056656-TK60E08K3,S1X Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 60A Max Gate Charge: 75nC @ 10V Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056656-TK60E08K3,S1X Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 60A Max Gate Charge: 75nC @ 10V Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK60E08K3,S1X - 056656-TK60E08K3,S1X - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK60E08K3,S1X
056656-TK60E08K3,S1X
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK60E08K3,S1X 056656-TK60E08K3,S1X
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056656-TK60E08K3,S1X Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 60A Max Gate Charge: 75nC @ 10V Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056656-TK60E08K3,S1X
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 60A
Max Gate Charge: 75nC @ 10V
Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056656-TK60E08K3,S1X
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK60E08K3,S1X
Polarity N-Channel; N-Channel
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