Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK60D08J1(Q) TK60D08J1(Q)

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1107452-TK60D08J1(Q)
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220(W)
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 5450pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

N-Channel 75V 60A (Ta) 140W (Tc) Through Hole TO-220(W)

MOSFET N-CH 75V 60A TO220 Product overview: TK60D08J1(Q) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 60A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 60A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK60D08J1(Q) can be used for catalog matching and distributor lookup.