Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D TK5P50D

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212907-TK5P50D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: TK5P50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FDD5N50NZ; TSM5NB50CP ROG; SiHD5N50D-GE3; FS5AS-10A; Introduction Date: January 20, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212907-TK5P50D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: TK5P50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FDD5N50NZ; TSM5NB50CP ROG; SiHD5N50D-GE3; FS5AS-10A; Introduction Date: January 20, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D - 212907-TK5P50D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D
212907-TK5P50D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D 212907-TK5P50D
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212907-TK5P50D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: TK5P50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FDD5N50NZ; TSM5NB50CP ROG; SiHD5N50D-GE3; FS5AS-10A; Introduction Date: January 20, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212907-TK5P50D
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Family Name: TK5P50D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 4.4V @ 1mA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): FDD5N50NZ; TSM5NB50CP ROG; SiHD5N50D-GE3; FS5AS-10A;
Introduction Date: January 20, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
500V 5A DPAK MOSFET Transistor
285-TK5P50D
500V 5A DPAK MOSFET Transistor 285-TK5P50D
Trans MOSFET N-CH Si 500V 5A 3-Pin(2+Tab) DPAK / MOSFET N-CH 500V 5A DPAK-3 Product overview: TK5P50D from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK5P50D can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH Si 500V 5A 3-Pin(2+Tab) DPAK / MOSFET N-CH 500V 5A DPAK-3 Product overview: TK5P50D from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK5P50D can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212907-TK5P50D 285-TK5P50D
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D 500V 5A DPAK MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 80000 milliwatts 80000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

40 V, P-channel Trench MOSFET - BUK6Q12-40PJ - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS -40 volts
IDSS -64000 milliamps
View Details
2 suppliers
CSD25304W1015 CSD25304W1015 20-V P-Channel NexFET? Power MOSFET - CSD25304W1015 - Texas Instruments
Specs
Polarity P-Channel
V(BR)DSS -20 volts
rDS(on) 0.0325 ohms
View Details
7 suppliers