Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D TK5P50D

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212907-TK5P50D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: TK5P50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FDD5N50NZ; TSM5NB50CP ROG; SiHD5N50D-GE3; FS5AS-10A; Introduction Date: January 20, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212907-TK5P50D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: TK5P50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FDD5N50NZ; TSM5NB50CP ROG; SiHD5N50D-GE3; FS5AS-10A; Introduction Date: January 20, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D - 212907-TK5P50D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D
212907-TK5P50D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D 212907-TK5P50D
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212907-TK5P50D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: TK5P50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FDD5N50NZ; TSM5NB50CP ROG; SiHD5N50D-GE3; FS5AS-10A; Introduction Date: January 20, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212907-TK5P50D
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Family Name: TK5P50D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 4.4V @ 1mA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): FDD5N50NZ; TSM5NB50CP ROG; SiHD5N50D-GE3; FS5AS-10A;
Introduction Date: January 20, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212907-TK5P50D
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK5P50D
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 80000 milliwatts
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