Toshiba America Electronic Components, Inc. 600V 3.7A MOSFET Transistor TK4A60DB

Trans MOSFET N-CH Si 600V 3.7A 3-Pin(3+Tab) TO-220SIS / MOSFET N-CH 600V 3.7A TO-220SIS Product overview: TK4A60DB from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.7A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK4A60DB can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 093861-TK4A60DB
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Family Name: TK4A60DB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.7A (Ta)
Gate-Source Threshold Voltage: 4.4V @ 1mA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 540pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V
Alternative Parts (Cross-Reference): TSM4ND65CI C0G; STP4NA60FP; MDF4N60TH; MDF4N60TP;
Introduction Date: July 28, 2009
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance