Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK4A60DB TK4A60DB

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 093861-TK4A60DB Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Family Name: TK4A60DB Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.7A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 540pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V Alternative Parts (Cross-Reference): TSM4ND65CI C0G; STP4NA60FP; MDF4N60TH; MDF4N60TP; Introduction Date: July 28, 2009 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance