Toshiba America Electronic Components, Inc. Single FETs, MOSFETs TK40S06N1L,LQ

MOSFET N-CH 60V 40A DPAK

MOSFET N-CH 60V 40A DPAK

N-Channel 60V 40A (Ta) 88.2W (Tc) Surface Mount DPAK+

MOSFET N-CH 60V 40A DPAK Product overview: TK40S06N1L,LQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 40A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK40S06N1L,LQ can be used for catalog matching and distributor lookup.

Win Source Part Number: 1151317-TK40S06N1L,LQ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: U-MOSVIII-H
Package: Tape & Reel (TR)
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK+
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 175°C
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: 264-TK40S06N1LLQTR
Base Product Number: TK40S06
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V