Toshiba America Electronic Components, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single TK40S06N1L,LQ

Description
Win Source Part Number: 1151317-TK40S06N1L,L Q Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: U-MOSVIII-H Package: Tape & Reel (TR) Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 88.2W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK+ Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 175°C ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Toshiba Semiconductor and Storage Other Names: 264-TK40S06N1LLQTR Base Product Number: TK40S06 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1151317-TK40S06N1L,L Q Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: U-MOSVIII-H Package: Tape & Reel (TR) Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 88.2W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK+ Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 175°C ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Toshiba Semiconductor and Storage Other Names: 264-TK40S06N1LLQTR Base Product Number: TK40S06 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1151317-TK40S06N1L,LQ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1151317-TK40S06N1L,LQ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1151317-TK40S06N1L,LQ
Win Source Part Number: 1151317-TK40S06N1L,L Q Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: U-MOSVIII-H Package: Tape & Reel (TR) Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 88.2W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK+ Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 175°C ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Toshiba Semiconductor and Storage Other Names: 264-TK40S06N1LLQTR Base Product Number: TK40S06 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1151317-TK40S06N1L,LQ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: U-MOSVIII-H
Package: Tape & Reel (TR)
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK+
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 175°C
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: 264-TK40S06N1LLQTR
Base Product Number: TK40S06
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now
Singapore, Singapore
60V 40A DPAK MOSFET Transistor
278-TK40S06N1L,LQ
60V 40A DPAK MOSFET Transistor 278-TK40S06N1L,LQ
MOSFET N-CH 60V 40A DPAK Product overview: TK40S06N1L,LQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 40A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK40S06N1L,LQ can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 40A DPAK Product overview: TK40S06N1L,LQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 40A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK40S06N1L,LQ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 264-TK40S06N1LLQDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
264-TK40S06N1LLQDKR-ND
Single FETs, MOSFETs 264-TK40S06N1LLQDKR-ND
MOSFET N-CH 60V 40A DPAK

MOSFET N-CH 60V 40A DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 264-TK40S06N1LLQCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
264-TK40S06N1LLQCT-ND
Single FETs, MOSFETs 264-TK40S06N1LLQCT-ND
MOSFET N-CH 60V 40A DPAK

MOSFET N-CH 60V 40A DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 264-TK40S06N1LLQTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
264-TK40S06N1LLQTR-ND
Single FETs, MOSFETs 264-TK40S06N1LLQTR-ND
N-Channel 60V 40A (Ta) 88.2W (Tc) Surface Mount DPAK+

N-Channel 60V 40A (Ta) 88.2W (Tc) Surface Mount DPAK+

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK40S06N1L,LQ - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TK40S06N1L,LQ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TK40S06N1L,LQ
MOSFET N-CH 60V 40A DPAK

MOSFET N-CH 60V 40A DPAK

Supplier's Site
Single FETs, MOSFETs - TK40S06N1L,LQ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TK40S06N1L,LQ
Single FETs, MOSFETs TK40S06N1L,LQ
MOSFET N-CH 60V 40A DPAK

MOSFET N-CH 60V 40A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Acme Chip Technology Co., Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1151317-TK40S06N1L,LQ 278-TK40S06N1L,LQ 264-TK40S06N1LLQDKR-ND TK40S06N1L,LQ TK40S06N1L,LQ
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 60V 40A DPAK MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
PD 88200 milliwatts 88.2 milliwatts 88200 milliwatts
TJ 175 C (347 F) 175 C (347 F) 175 C (347 F)
Package Type SOT3 Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Surface Mount TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET Operating Mode Enhancement
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