Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK40E10K3 TK40E10K3

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 367097-TK40E10K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 4000pF @ 10V Maximum Rds On at Id,Vgs: 15 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 367097-TK40E10K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 4000pF @ 10V Maximum Rds On at Id,Vgs: 15 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK40E10K3 - 367097-TK40E10K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK40E10K3
367097-TK40E10K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK40E10K3 367097-TK40E10K3
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 367097-TK40E10K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 4000pF @ 10V Maximum Rds On at Id,Vgs: 15 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 367097-TK40E10K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 40A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 4000pF @ 10V
Maximum Rds On at Id,Vgs: 15 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 367097-TK40E10K3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK40E10K3
Polarity N-Channel; N-Channel
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