Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK40A10N1 TK40A10N1

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 043104-TK40A10N1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 500μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 3000pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance