Toshiba Electronics (UK) Ltd 600V 38.8A MOSFET Transistor TK39A60W,S4VX

MOSFET N-CH 600V 38.8A TO220SIS Product overview: TK39A60W,S4VX from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 38.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 38.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK39A60W,S4VX can be used for catalog matching and distributor lookup.

N-Channel 600V 38.8A (Ta) 50W (Tc) Through Hole TO-220SIS

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1050515-TK39A60W,S4VX
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 38.8A (Ta)
Gate-Source Threshold Voltage: 3.7V @ 1.9mA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4100pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 65 mOhm @ 19.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance