N-Channel 600V 38.8A (Ta) 50W (Tc) Through Hole TO-220SIS
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1050515-TK39A60W,S4V
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 38.8A (Ta)
Gate-Source Threshold Voltage: 3.7V @ 1.9mA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4100pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 65 mOhm @ 19.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 38.8A TO220SIS
| DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | TK39A60WS4VX-ND | 1050515-TK39A60W,S4VX | TK39A60W,S4VX |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK39A60W,S4VX | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220SIS | 10V |
| V(BR)DSS | 600 volts |
