Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK35N65W5,S1F

N-Channel 650V 35A (Ta) 270W (Tc) Through Hole TO-247

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1050490-TK35N65W5,S1F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 270W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 35A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 2.1mA
Max Gate Charge: 115nC @ 10V
Max Input Capacitance: 4100pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 95 mOhm @ 17.5A, 10V
Alternative Parts (Cross-Reference): STW48N60DM2; SPW52N50C3XK; IPW60R045CPA;
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

MOSFET N-CH 650V 35A TO247 Product overview: TK35N65W5,S1F from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK35N65W5,S1F can be used for catalog matching and distributor lookup.