N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1325314-TK31V60X,LQ
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30.8A
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Power Dissipation (Max): 240W (Tc)
Supplier Device Package: 4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-VSFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: TK31V60X,LQ(S,TK31V6
Base Product Number: TK31V60
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 600V 30.8A 4DFN
MOSFET N-CH 600V 30.8A 4DFN
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | TK31V60XLQDKR-ND | 1325314-TK31V60X,LQ | TK31V60X,LQ | TK31V60X,LQ |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |
| Package Type | 4-VSFN Exposed Pad | SOT3; 4-VSFN Exposed Pad | 4-VSFN Exposed Pad | 4-VSFN Exposed Pad |
| PD | 240000 milliwatts | 240000 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) |