Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK31V60X,LQ

MOSFET N-CH 600V 30.8A 4DFN

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1325314-TK31V60X,LQ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30.8A
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Power Dissipation (Max): 240W (Tc)
Supplier Device Package: 4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-VSFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: TK31V60X,LQ(S,TK31V60XLQDKR,TK31V60XLQCT,TK31V60XLQTR
Base Product Number: TK31V60
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)

N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)

N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)