N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
MOSFET N-CH 600V 30.8A 4DFN Product overview: TK31V60W5,LVQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 30.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 30.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK31V60W5,LVQ can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1107433-TK31V60W5,LV
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 240W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TA)
Case / Package: 4-DFN-EP (8x8)
Dimension: 4-VSFN Exposed Pad
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 30.8A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 1.5mA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 3000pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 109 mOhm @ 15.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 30.8A 4DFN
MOSFET N-CH 600V 30.8A 4DFN
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Acme Chip Technology Co., Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TK31V60W5LVQCT-ND | 278-TK31V60W5,LVQ | 1107433-TK31V60W5,LVQ | TK31V60W5,LVQ | TK31V60W5,LVQ |
| Product Name | Single FETs, MOSFETs | 600V 30.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK31V60W5,LVQ | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |
| Package Type | 4-VSFN Exposed Pad | Tape & Reel (TR) | SOT3; 4-DFN-EP (8x8) | 3000 pF @ 300 V | 4-VSFN Exposed Pad |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | ||
| PD | 240 milliwatts | 240000 milliwatts | 240000 milliwatts |
