Toshiba Electronics (UK) Ltd 600V 30.8A MOSFET Transistor TK31N60W,S1VF

MOSFET N CH 600V 30.8A TO247 Product overview: TK31N60W,S1VF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 30.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 30.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK31N60W,S1VF can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212878-TK31N60W,S1VF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 30.8A (Ta)
Gate-Source Threshold Voltage: 3.7V @ 1.5mA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 3000pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 88 mOhm @ 15.4A, 10V
Alternative Parts (Cross-Reference): STW43NM60ND; TK31N60W(S1VF,S); TK31N60X;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-247