Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK30S06K3L TK30S06K3L

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056652-TK30S06K3L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: DPAK+ Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 1350pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 Ohm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance