Toshiba Imaging Systems Division TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK30E06N1 TK30E06N1

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 043102-TK30E06N1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 53W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 43A (Ta)
Gate-Source Threshold Voltage: 4V @ 200μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 1050pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

MOSFET N-Ch 60V 30A U-MOS TO220

MOSFET N-CH 60V 43A TO-220 Product overview: TK30E06N1 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 43A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 43A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK30E06N1 can be used for catalog matching and distributor lookup.