PB-F POWER MOSFET TRANSISTOR DPA
PB-F POWER MOSFET TRANSISTOR DPA
PB-F POWER MOSFET TRANSISTOR DPA
PB-F POWER MOSFET TRANSISTOR DPA Product overview: TK2P90E,RQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK2P90E,RQ can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1099438-TK2P90E,RQ
Categories: OEM Parts(T-Z)
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Shortage
PB-F POWER MOSFET TRANSISTOR DPA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 264-TK2P90ERQTR-ND | 278-TK2P90E,RQ | 1099438-TK2P90E,RQ | TK2P90E,RQ |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | OEM Parts - OEM Parts (T - Z) - TK2P90E,RQ | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | SOT3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| MOSFET Operating Mode | Enhancement | Enhancement | ||
| V(BR)DSS | 900 volts |
