Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20S06K3L TK20S06K3L

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 092553-TK20S06K3L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Family Name: TK20S06K3L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: DPAK+ Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 780pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): NTD5413NT4G; ATP212-TL-H; IPD220N06L3 G; IPD250N06N3GBTMA1; Introduction Date: July 15, 2011 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 092553-TK20S06K3L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Family Name: TK20S06K3L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: DPAK+ Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 780pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): NTD5413NT4G; ATP212-TL-H; IPD220N06L3 G; IPD250N06N3GBTMA1; Introduction Date: July 15, 2011 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20S06K3L - 092553-TK20S06K3L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20S06K3L
092553-TK20S06K3L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20S06K3L 092553-TK20S06K3L
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 092553-TK20S06K3L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Family Name: TK20S06K3L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: DPAK+ Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 780pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): NTD5413NT4G; ATP212-TL-H; IPD220N06L3 G; IPD250N06N3GBTMA1; Introduction Date: July 15, 2011 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 092553-TK20S06K3L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Family Name: TK20S06K3L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: DPAK+
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 780pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): NTD5413NT4G; ATP212-TL-H; IPD220N06L3 G; IPD250N06N3GBTMA1;
Introduction Date: July 15, 2011
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
Automotive 60V 20A DPAK MOSFET Transistor
285-TK20S06K3L
Automotive 60V 20A DPAK MOSFET Transistor 285-TK20S06K3L
Trans MOSFET N-CH Si 60V 20A Automotive 3-Pin(2+Tab) DPAK+ T/R / MOSFET N-CH 60V 20A DPAK-3 Product overview: TK20S06K3L from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 20A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 20A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK20S06K3L can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH Si 60V 20A Automotive 3-Pin(2+Tab) DPAK+ T/R / MOSFET N-CH 60V 20A DPAK-3 Product overview: TK20S06K3L from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 20A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 20A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK20S06K3L can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 092553-TK20S06K3L 285-TK20S06K3L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20S06K3L Automotive 60V 20A DPAK MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 38000 milliwatts 38000 milliwatts
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