Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20J60U TK20J60U

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056410-TK20J60U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N) Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1470pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056410-TK20J60U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N) Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1470pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20J60U - 056410-TK20J60U - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20J60U
056410-TK20J60U
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20J60U 056410-TK20J60U
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056410-TK20J60U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N) Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1470pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056410-TK20J60U
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P(N)
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1470pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056410-TK20J60U
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK20J60U
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 190000 milliwatts
Unlock Full Specs
to access all available technical data