The TK1Q90A is a silicon N-channel MOSFET designed for switching applications such as voltage regulators. It is packaged in a new PW-Mold2 case with three pins, where the drain serves as a heatsink. The device has a drain-source voltage rating of 900 V and a continuous drain current of 1 A. It features a typical on-resistance of 6.7 Ω at a gate-source voltage of 10 V and a drain current of 0.5 A. The gate threshold voltage ranges from 2.0 to 4.0 V. The maximum channel temperature is 150°C, with a channel-to-case thermal resistance of 6.25°C/W and a channel-to-ambient thermal resistance of 125°C/W. The transistor supports a single-pulse avalanche energy of 216 mJ and repetitive avalanche energy of 2.0 mJ.
Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag Product overview: TK1Q90A(Q) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK1Q90A(Q) can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-TK1Q90A(Q) |
| Product Name | 900V 1A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 900 volts |
| PD | 20000 milliwatts |
