Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 796831-TK17N65W,S1F
Series: DTMOSIV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Family Name: TK17N65W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 3.5V @ 900μA
Gate Charge (Qg) (Maximum) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1800pF @ 300V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 165W (Tc)
Rds On (Maximum) @ Id, Vgs: 200 mOhm @ 8.7A, 10V
Alternative Parts (Cross-Reference): IPW65R190CFDAFKSA1 ; IPW65R190CFDA; R6030MNZ1C9; R6020KNZ4C13;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
N-Channel 650V 17.3A (Ta) 165W (Tc) Through Hole TO-247
MOSFET N-CH 650V 17.3A TO247
| Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 796831-TK17N65W,S1F | TK17N65WS1F-ND | TK17N65W,S1F |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK17N65W,S1F | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 165000 milliwatts |
