N-Channel 800V 17A (Ta) 180W (Tc) Through Hole TO-220
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 796830-TK17E80W,S1X
Series: DTMOSIV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4V @ 850μA
Gate Charge (Qg) (Maximum) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2050pF @ 300V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 180W (Tc)
Rds On (Maximum) @ Id, Vgs: 290 mOhm @ 8.5A, 10V
Alternative Parts (Cross-Reference): SPP17N80C3; TK17E80W; TK17E80W,S1X; STP18NM80;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET N-CHANNEL 800V 17A TO220
MOSFET N-CHANNEL 800V 17A TO220
MOSFET N-CHANNEL 800V 17A TO220
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TK17E80WS1X-ND | 796830-TK17E80W,S1X | TK17E80W,S1X | TK17E80W,S1X | 4669-TK17E80W,S1X |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK17E80W,S1X | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET N-CHANNEL 800V 17A TO220 |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | 10V | TO-220; TO-220-3 | |
| PD | 180000 milliwatts | 180000 milliwatts | 180000 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
