Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1050282-TK17E65W,S1X
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 165W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 17.3A (Ta)
Gate-Source Threshold Voltage: 3.5V @ 900μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1800pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 200 mOhm @ 8.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
N-Channel 650V 17.3A (Ta) 165W (Tc) Through Hole TO-220
MOSFET N-CH 650V 17.3A TO-220AB
MOSFET N-CH 650V 17.3A TO220
| Win Source Electronics | DigiKey | Utmel Electronic Limited | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1050282-TK17E65W,S1X | TK17E65WS1X-ND | 4669-TK17E65W,S1X | TK17E65W,S1X |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK17E65W,S1X | Single FETs, MOSFETs | MOSFET N-CH 650V 17.3A TO-220AB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 650 volts | |||
| PD | 165000 milliwatts | 165000 milliwatts |
