Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK16A60W5 TK16A60W5

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212868-TK16A60W5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Super Junction Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15.8A (Ta) Gate-Source Threshold Voltage: 3.7V @ 1.5mA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1350pF @ 300V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 7.9A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited