Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK16A60W5,S4VX

Description
N-Channel 600V 15.8A (Ta) 40W (Tc) Through Hole TO-220SIS
Request a Quote Datasheet
Description
N-Channel 600V 15.8A (Ta) 40W (Tc) Through Hole TO-220SIS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 264-TK16A60W5,S4VX-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
264-TK16A60W5,S4VX-ND
Single FETs, MOSFETs 264-TK16A60W5,S4VX-ND
N-Channel 600V 15.8A (Ta) 40W (Tc) Through Hole TO-220SIS

N-Channel 600V 15.8A (Ta) 40W (Tc) Through Hole TO-220SIS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1019253-TK16A60W5,S4VX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1019253-TK16A60W5,S4VX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1019253-TK16A60W5,S4VX
Win Source Part Number: 1019253-TK16A60W5,S4 VX Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: DTMOSIV Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Super Junction Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Power Dissipation (Max): 40W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Toshiba Semiconductor and Storage Other Names: TK16A60W5S4VX Base Product Number: TK16A60 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1019253-TK16A60W5,S4VX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: DTMOSIV
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Power Dissipation (Max): 40W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: TK16A60W5S4VX
Base Product Number: TK16A60
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK16A60W5,S4VX - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TK16A60W5,S4VX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TK16A60W5,S4VX
MOSFET N-CH 600V 15.8A TO220SIS

MOSFET N-CH 600V 15.8A TO220SIS

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 264-TK16A60W5,S4VX-ND 1019253-TK16A60W5,S4VX TK16A60W5,S4VX
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data