Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212867-TK16A55D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 16A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2600pF @ 25V
Maximum Rds On at Id,Vgs: 330 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 212867-TK16A55D |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK16A55D |
| Polarity | N-Channel; N-Channel |
