Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK15A60U TK15A60U

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056647-TK15A60U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 950pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 300 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056647-TK15A60U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 950pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 300 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK15A60U - 056647-TK15A60U - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK15A60U
056647-TK15A60U
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK15A60U 056647-TK15A60U
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056647-TK15A60U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 950pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 300 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056647-TK15A60U
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 950pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 300 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056647-TK15A60U
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK15A60U
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 40000 milliwatts
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