Toshiba Electronics (UK) Ltd 650V 13.7A MOSFET Transistor TK14N65W,S1F

MOSFET N-CH 650V 13.7A TO247 Product overview: TK14N65W,S1F from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK14N65W,S1F can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1050255-TK14N65W,S1F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13.7A (Ta)
Gate-Source Threshold Voltage: 3.5V @ 690μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1300pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-247