Toshiba Electronics (UK) Ltd 650V 13.7A TO220 MOSFET Transistor TK14E65W,S1X

MOSFET N-CH 650V 13.7A TO220 Product overview: TK14E65W,S1X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK14E65W,S1X can be used for catalog matching and distributor lookup.

N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 796827-TK14E65W,S1X
Series: DTMOSIV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Family Name: TK14E65W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 3.5V @ 690μA
Gate Charge (Qg) (Maximum) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 300V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 130W (Tc)
Rds On (Maximum) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
Alternative Parts (Cross-Reference): STP25NM60ND; STP23NM60ND; IPP65R310CFDAAKSA1; IPP65R310CFDAXK;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance