Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK14A55D TK14A55D

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212864-TK14A55D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 370 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): STP12NM50FP; IPA50R299CP; TK14A55D(Q; Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212864-TK14A55D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 370 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): STP12NM50FP; IPA50R299CP; TK14A55D(Q; Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK14A55D - 212864-TK14A55D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK14A55D
212864-TK14A55D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK14A55D 212864-TK14A55D
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212864-TK14A55D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 370 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): STP12NM50FP; IPA50R299CP; TK14A55D(Q; Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212864-TK14A55D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 2300pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 370 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): STP12NM50FP; IPA50R299CP; TK14A55D(Q;
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212864-TK14A55D
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK14A55D
Polarity N-Channel; N-Channel
V(BR)DSS 550 volts
PD 50000 milliwatts
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