Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK13E25D,S1X(S TK13E25D,S1X(S

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1107408-TK13E25D,S1X(S
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 102W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 250V 13A TO220-3 Product overview: TK13E25D,S1X(S from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 13A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 13A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK13E25D,S1X(S can be used for catalog matching and distributor lookup.

N-Channel 250V 13A (Ta) 102W (Tc) Through Hole TO-220-3