Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK13E25D,S1X(S

Description
N-Channel 250V 13A (Ta) 102W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 250V 13A (Ta) 102W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TK13E25DS1X(S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TK13E25DS1X(S-ND
Single FETs, MOSFETs TK13E25DS1X(S-ND
N-Channel 250V 13A (Ta) 102W (Tc) Through Hole TO-220-3

N-Channel 250V 13A (Ta) 102W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore, Singapore
250V 13A TO220 MOSFET Transistor
278-TK13E25D,S1X(S
250V 13A TO220 MOSFET Transistor 278-TK13E25D,S1X(S
MOSFET N-CH 250V 13A TO220-3 Product overview: TK13E25D,S1X(S from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 13A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 13A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK13E25D,S1X(S can be used for catalog matching and distributor lookup.

MOSFET N-CH 250V 13A TO220-3 Product overview: TK13E25D,S1X(S from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 13A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 13A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK13E25D,S1X(S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK13E25D,S1X(S - 1107408-TK13E25D,S1X(S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK13E25D,S1X(S
1107408-TK13E25D,S1X(S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK13E25D,S1X(S 1107408-TK13E25D,S1X(S
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1107408-TK13E25D,S1X (S Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 102W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1100pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1107408-TK13E25D,S1X(S
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 102W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK13E25D,S1X(S - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TK13E25D,S1X(S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TK13E25D,S1X(S
MOSFET N-CH 250V 13A TO220-3

MOSFET N-CH 250V 13A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TK13E25DS1X(S-ND 278-TK13E25D,S1X(S 1107408-TK13E25D,S1X(S TK13E25D,S1X(S
Product Name Single FETs, MOSFETs 250V 13A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK13E25D,S1X(S Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Tube TO-220; SOT3; TO-220-3 TO-220; TO-220-3
MOSFET Operating Mode Enhancement
V(BR)DSS 250 volts 250 volts
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