Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK13A50D(STA4,Q,M)

Description
N-Channel 500V 13A (Ta) 45W (Tc) Through Hole TO-220SIS
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Description
N-Channel 500V 13A (Ta) 45W (Tc) Through Hole TO-220SIS
Request a Quote Datasheet

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Single FETs, MOSFETs - TK13A50D(STA4QM)-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TK13A50D(STA4QM)-ND
Single FETs, MOSFETs TK13A50D(STA4QM)-ND
N-Channel 500V 13A (Ta) 45W (Tc) Through Hole TO-220SIS

N-Channel 500V 13A (Ta) 45W (Tc) Through Hole TO-220SIS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1007500-TK13A50D(STA4,Q,M) - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1007500-TK13A50D(STA4,Q,M)
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1007500-TK13A50D(STA4,Q,M)
Win Source Part Number: 1007500-TK13A50D(STA 4,Q,M) Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: π-MOSVII Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 45W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Toshiba Semiconductor and Storage Other Names: TK13A50D(STA4QM),TK1 3A50DSTA4QM Base Product Number: TK13A50 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1007500-TK13A50D(STA4,Q,M)
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: π-MOSVII
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: TK13A50D(STA4QM),TK13A50DSTA4QM
Base Product Number: TK13A50
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK13A50D(STA4,Q,M) - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TK13A50D(STA4,Q,M)
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TK13A50D(STA4,Q,M)
MOSFET N-CH 500V 13A TO220SIS

MOSFET N-CH 500V 13A TO220SIS

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TK13A50D(STA4QM)-ND 1007500-TK13A50D(STA4,Q,M) TK13A50D(STA4,Q,M)
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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