Toshiba Electronics (UK) Ltd 600V 11.5A TO-220 MOSFET Transistor TK12E60W,S1VX

MOSFET N CH 600V 11.5A TO-220 Product overview: TK12E60W,S1VX from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK12E60W,S1VX can be used for catalog matching and distributor lookup.

N-Channel 600V 11.5A (Ta) 110W (Tc) Through Hole TO-220

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1050217-TK12E60W,S1VX
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11.5A (Ta)
Gate-Source Threshold Voltage: 3.7V @ 600μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 890pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 300 mOhm @ 5.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance