Toshiba Imaging Systems Division MOSFETs TK12E60W,S1VX(S

MOSFET N-Ch 600V 11.5A DTMOS TO-220

MOSFET N-Ch 600V 11.5A DTMOS TO-220

MOSFET N-Ch 600V 11.5A DTMOS TO-220

TO-220-3 MOSFETs ROHS

Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220 Product overview: TK12E60W,S1VX(S from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11.5A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK12E60W,S1VX(S can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1008959-TK12E60W,S1VX(S
Mounting: SMD (SMT)
Number of Elements: 1
Power Dissipation: 110 W
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220
Alternative Parts (Cross-Reference): STP11NK40Z; STP19NM50N; STP18NM60N; FQP14N15; FDP12N60NZ; FQP13N50TK12E60WS1VX(S; TK12E60WS1VXS;
Popularity: Low
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): 11.5 A
Gate to Source Voltage (Vgs): 30 V