Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A60W TK12A60W

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212860-TK12A60W Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Super Junction Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Family Name: TK12A60W Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11.5A (Ta) Gate-Source Threshold Voltage: 3.7V @ 600μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 890pF @ 300V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 300 mOhm @ 5.8A, 10V Alternative Parts (Cross-Reference): IXTV26N60P; IXFV26N60P; IXFV22N60P; IXFV18N60P; Introduction Date: August 27, 2012 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2030 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited