Toshiba America Electronic Components, Inc. Transistor TK12A50D

Description
MOSFET N-CH 500V 12A TO-220SIS. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet
Description
MOSFET N-CH 500V 12A TO-220SIS. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 65332753 - Radwell International
Willingboro, NJ, United States
Transistor
65332753
Transistor 65332753
MOSFET N-CH 500V 12A TO-220SIS. FREE 2 YEAR RADWELL WARRANTY

MOSFET N-CH 500V 12A TO-220SIS. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Transistors - TK12A50D - ODG (Origin Data Global)
Shenzhen, China
Transistors
TK12A50D
Transistors TK12A50D
TO-220 MOSFETs ROHS

TO-220 MOSFETs ROHS

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A50D - 092736-TK12A50D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A50D
092736-TK12A50D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A50D 092736-TK12A50D
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 092736-TK12A50D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: TK12A50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1350pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 520 mOhm @ 6A, 10V Alternative Parts (Cross-Reference): AOTF12N50; R5011FNX; AOTF12N50L; Introduction Date: September 10, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 092736-TK12A50D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: TK12A50D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 520 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): AOTF12N50; R5011FNX; AOTF12N50L;
Introduction Date: September 10, 2008
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Radwell International ODG (Origin Data Global) Win Source Electronics
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 65332753 TK12A50D 092736-TK12A50D
Product Name Transistor Transistors TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A50D
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 45000 milliwatts
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