Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 092736-TK12A50D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: TK12A50D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 520 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): AOTF12N50; R5011FNX; AOTF12N50L;
Introduction Date: September 10, 2008
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 500V 12A TO-220SIS. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | Win Source Electronics | Radwell International | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | TK12A50D | 092736-TK12A50D | 65332753 |
| Product Name | Transistors | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A50D | Transistor |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 500 volts | ||
| PD | 45000 milliwatts |