Toshiba Imaging Systems Division 600V 9.7A TO-220 MOSFET Transistor TK10E60W,S1VX(S

Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220 Product overview: TK10E60W,S1VX(S from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9.7A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9.7A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK10E60W,S1VX(S can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1019251-TK10E60W,S1VX(S
Mounting: SMD (SMT)
Number of Elements: 1
Power Dissipation: 100 W
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220
Alternative Parts (Cross-Reference): STP11NK50Z; STP10NK60Z; FCP11N60N; STP12NK30Z; FQP10N20CTSTU; FQP9N25CTK10E60WS1VX(S;
Popularity: Low
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): 9.7 A
Gate to Source Voltage (Vgs): 30 V