The TK10A80W,S4X is a silicon N-channel MOSFET designed for applications such as switching voltage regulators. It features a low drain-source on-resistance of 0.46 ,Ѷ, achieved through a Super Junction Structure known as DTMOS. The device operates with a maximum drain-source voltage of 800 V and a continuous drain current rating of 9.5 A at a channel temperature of 25¬8C. The gate threshold voltage ranges from 3.0 to 4.0 V, allowing for easy control of gate switching. This MOSFET is packaged in a TO-220SIS configuration, suitable for through-hole mounting. It has a power dissipation capability of 40 W and a storage temperature range from -55¬8C to 150¬8C. The device is sensitive to electrostatic discharge, necessitating careful handling. The estimated production lead time is 15 weeks, and it is categorized under discrete semiconductor products.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 899673-TK10A80W,S4X
Series: DTMOSIV
Operating Temperature Range: 150°C
Features: N-Channel 800 V 9.5A (Ta) 40W (Tc) Through Hole TO-220SIS
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: TK10A80
Categories: Discrete Semiconductor Products
Case / Package: TO-220SIS
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: Not Applicable
Estimated Pruduction Lead Time: 15 Weeks
HTSUS: 8541.29.0095
Other Part Number: TK10A80W,S4X(S, TK10A80WS4X
N-Channel 800V 9.5A (Ta) 40W (Tc) Through Hole TO-220SIS
MOSFET N-CH 800V 9.5A TO220SIS
| Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 899673-TK10A80W,S4X | 264-TK10A80W,S4X-ND | TK10A80W,S4X |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK10A80W,S4X | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
