MOSFET N-CH 800V 10A TO220SIS Product overview: TK10A80E,S4X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK10A80E,S4X can be used for catalog matching and distributor lookup.
N-Channel 800V 10A (Ta) 50W (Tc) Through Hole TO-220SIS
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 796822-TK10A80E,S4X
Series: π-MOSVIII
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack, Isolated Tab
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Family Name: TK10A80E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220SIS
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 1 Ohm @ 5A, 10V
Alternative Parts (Cross-Reference): TSM10N80CI C0; TSM10N80CI C0G; STU7NA80; STP6NC80ZFP;
Introduction Date: March 04, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 10A TO220SIS
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800V 10A 1Ω@5A,10V 50W 4V@1mA null TO-220SIS MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-TK10A80E,S4X | TK10A80ES4X-ND | 796822-TK10A80E,S4X | TK10A80E,S4X | 4669-TK10A80E,S4X | TK10A80E,S4X |
| Product Name | 800V 10A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK10A80E,S4X | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 800 volts | 800 volts | 800 volts | |||
| PD | 50 milliwatts | 50000 milliwatts | 50000 milliwatts | 50000 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
