Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK10A80E,S4X

N-Channel 800V 10A (Ta) 50W (Tc) Through Hole TO-220SIS

MOSFET N-CH 800V 10A TO220SIS Product overview: TK10A80E,S4X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK10A80E,S4X can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 796822-TK10A80E,S4X
Series: π-MOSVIII
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack, Isolated Tab
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Family Name: TK10A80E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220SIS
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 1 Ohm @ 5A, 10V
Alternative Parts (Cross-Reference): TSM10N80CI C0; TSM10N80CI C0G; STU7NA80; STP6NC80ZFP;
Introduction Date: March 04, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited