Toshiba Electronics (UK) Ltd 600V 9.7A MOSFET Transistor TK10A60W,S4VX

MOSFET N-CH 600V 9.7A TO220SIS Product overview: TK10A60W,S4VX from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK10A60W,S4VX can be used for catalog matching and distributor lookup.

N-Channel 600V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 812926-TK10A60W,S4VX
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 30W (Tc)
Popularity: Low
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 380mOhm at 4.9A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 20nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 700pF at 300V
Current - Continuous Drain (Id) at 25°C: 9.7A
Vgs(th) (Maximum) at Id: 3.7V at 500μA
Maximum Vgs: ±30V