Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK10A60D TK10A60D

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 043096-TK10A60D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: TK10A60D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1350pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): NTE2927; TSM10NC60CF C0G; AOTF10N60; TSM10NC65CF C0G; Introduction Date: June 04, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient