Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK10A50D TK10A50D

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 093342-TK10A50D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: TK10A50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1050pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 720 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): R5009ANX; AOTF10N50FD; FQPF9N50CT_NL; Introduction Date: November 14, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance