Toshiba Electronics (UK) Ltd 100V 100A TO220 MOSFET Transistor TK100E10N1,S1X

Description
MOSFET N-CH 100V 100A TO220 Product overview: TK100E10N1,S1X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK100E10N1,S1X can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
MOSFET N-CH 100V 100A TO220 Product overview: TK100E10N1,S1X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK100E10N1,S1X can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
100V 100A TO220 MOSFET Transistor
278-TK100E10N1,S1X
100V 100A TO220 MOSFET Transistor 278-TK100E10N1,S1X
MOSFET N-CH 100V 100A TO220 Product overview: TK100E10N1,S1X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK100E10N1,S1X can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 100A TO220 Product overview: TK100E10N1,S1X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK100E10N1,S1X can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - TK100E10N1S1X-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TK100E10N1S1X-ND
Single FETs, MOSFETs TK100E10N1S1X-ND
N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO-220

N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO-220

Buy Now Datasheet
FETs - Single - TK100E10N1,S1X - 735206-TK100E10N1,S1X - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - TK100E10N1,S1X
735206-TK100E10N1,S1X
FETs - Single - TK100E10N1,S1X 735206-TK100E10N1,S1X
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 735206-TK100E10N1,S1 X Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Family Name: TK100E10N1 Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 255W Alternative Parts (Cross-Reference): TSM160N10CZ C0; STP180N10F3; IPP120N10S403AKSA1; Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: Not Applicable Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 100A Rds On (Maximum) at Id, Vgs: 3.4mOhm at 50A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 8800pF at 50V

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 735206-TK100E10N1,S1X
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: TK100E10N1
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 255W
Alternative Parts (Cross-Reference): TSM160N10CZ C0; STP180N10F3; IPP120N10S403AKSA1;
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: Not Applicable
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 100A
Rds On (Maximum) at Id, Vgs: 3.4mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 8800pF at 50V

Buy Now
Single FETs, MOSFETs - TK100E10N1,S1X - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TK100E10N1,S1X
Single FETs, MOSFETs TK100E10N1,S1X
MOSFET N-CH 100V 100A TO220

MOSFET N-CH 100V 100A TO220

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK100E10N1,S1X - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TK100E10N1,S1X
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TK100E10N1,S1X
MOSFET N-CH 100V 100A TO220

MOSFET N-CH 100V 100A TO220

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-TK100E10N1,S1X TK100E10N1S1X-ND 735206-TK100E10N1,S1X TK100E10N1,S1X TK100E10N1,S1X
Product Name 100V 100A TO220 MOSFET Transistor Single FETs, MOSFETs FETs - Single - TK100E10N1,S1X Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts 100 volts 100 volts
PD 255 milliwatts 255000 milliwatts 255000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
Unlock Full Specs
to access all available technical data