Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 735206-TK100E10N1,S1
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: TK100E10N1
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 255W
Alternative Parts (Cross-Reference): TSM160N10CZ C0; STP180N10F3; IPP120N10S403AKSA1;
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: Not Applicable
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 100A
Rds On (Maximum) at Id, Vgs: 3.4mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 8800pF at 50V
MOSFET N-CH 100V 100A TO220 Product overview: TK100E10N1,S1X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK100E10N1,S1X can be used for catalog matching and distributor lookup.
N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO-220
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MOSFET N-CH 100V 100A TO220
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 735206-TK100E10N1,S1X | 278-TK100E10N1,S1X | TK100E10N1S1X-ND | TK100E10N1,S1X | TK100E10N1,S1X |
| Product Name | FETs - Single - TK100E10N1,S1X | 100V 100A TO220 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||
| PD | 255000 milliwatts | 255 milliwatts | 255000 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | ||
| Package Type | TO-220; SOT3 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
