Toshiba Imaging Systems Division MOSFETs TK100E08N1

MOSFET N-Ch 80V 100A U-MOS TO220

MOSFET N-Ch 80V 100A U-MOS TO220

MOSFET N-Ch 80V 100A U-MOS TO220

MOSFET N-CH 80V 100A TO220 Product overview: TK100E08N1 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 100A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK100E08N1 can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 043095-TK100E08N1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 255W (Tc)
Family Name: TK100E08N1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 100A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 9000pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): FDP032N08B_F102; SUP60030E-GE3; AOT282L;
Introduction Date: January 09, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited