Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK099Z60Z1,S1F

Description
N-CH MOSFET 600 V 0.099 OHM TO-2
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Description
N-CH MOSFET 600 V 0.099 OHM TO-2
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Datasheet
Datasheet Summary
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The TK099Z60Z1 is an N-channel MOSFET designed for switching power supplies, packaged in a TO-247-4L(X) case with a drain connected to the heatsink. It has a drain-source voltage rating of 600 V, a continuous drain current of 25 A, and a typical drain-source on-resistance of 0.083 Ω at 10 V gate drive. The device features a gate threshold voltage range of 3 to 4 V, an input capacitance of 2050 pF at 300 V, and a channel-to-case thermal resistance of 0.71 °C/W. Single-pulse avalanche energy is rated at 278 mJ. The part is rated for a maximum channel temperature of 150 °C and a storage temperature range of -55 °C to 150 °C.

Datasheet Summary
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The TK099Z60Z1 is an N-channel MOSFET designed for switching power supplies, packaged in a TO-247-4L(X) case with a drain connected to the heatsink. It has a drain-source voltage rating of 600 V, a continuous drain current of 25 A, and a typical drain-source on-resistance of 0.083 Ω at 10 V gate drive. The device features a gate threshold voltage range of 3 to 4 V, an input capacitance of 2050 pF at 300 V, and a channel-to-case thermal resistance of 0.71 °C/W. Single-pulse avalanche energy is rated at 278 mJ. The part is rated for a maximum channel temperature of 150 °C and a storage temperature range of -55 °C to 150 °C.

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Single FETs, MOSFETs - 264-TK099Z60Z1,S1F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
264-TK099Z60Z1,S1F-ND
Single FETs, MOSFETs 264-TK099Z60Z1,S1F-ND
N-CH MOSFET 600 V 0.099 OHM TO-2

N-CH MOSFET 600 V 0.099 OHM TO-2

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 264-TK099Z60Z1,S1F-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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