Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK040Z65Z,S1F

Description
N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247-4L
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Description
N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247-4L
Request a Quote
Datasheet
Datasheet Summary
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The TK040Z65Z is a silicon N-channel MOSFET designed for switching power supplies, featuring a 650 V drain-source voltage rating, a DC drain current of 57 A, and a drain-source on-resistance of 0.033 Ω (typical) at 10 V gate-source voltage. It is packaged in a TO-247-4L(T) case with a weight of 6.35 g (typical) and includes a four-terminal configuration for improved switching performance. The device has a channel-to-case thermal resistance of 0.347 °C/W and a maximum channel temperature of 150 °C. The part is RoHS compatible and meets the AEC-Q200 standard for automotive applications.

Datasheet Summary
Powered by GS/AI

The TK040Z65Z is a silicon N-channel MOSFET designed for switching power supplies, featuring a 650 V drain-source voltage rating, a DC drain current of 57 A, and a drain-source on-resistance of 0.033 Ω (typical) at 10 V gate-source voltage. It is packaged in a TO-247-4L(T) case with a weight of 6.35 g (typical) and includes a four-terminal configuration for improved switching performance. The device has a channel-to-case thermal resistance of 0.347 °C/W and a maximum channel temperature of 150 °C. The part is RoHS compatible and meets the AEC-Q200 standard for automotive applications.

Suppliers

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Single FETs, MOSFETs - 264-TK040Z65ZS1F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
264-TK040Z65ZS1F-ND
Single FETs, MOSFETs 264-TK040Z65ZS1F-ND
N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247-4L

N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247-4L

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 264-TK040Z65ZS1F-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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