MOSFET P-CH 60V 8A DPAK-3 Product overview: TJ8S06M3L from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TJ8S06M3L can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212848-TJ8S06M3L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: DPAK+
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 890pF @ 10V
Maximum Gate-Source Voltage: +10V, -20V
Maximum Rds On at Id,Vgs: 104 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET, P-CH, -10V, -8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-TJ8S06M3L | 212848-TJ8S06M3L | 1712492 | 78Y6743 |
| Product Name | 60V 8A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TJ8S06M3L | MOSFETs | Mosfet, P-Ch, -10V, -8A, To-252; Transistor Polarity Toshiba |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | |
| PD | 27000 milliwatts | 27000 milliwatts | ||
| TJ | 175 C (347 F) | 175 C (347 F) | ||
| Package Type | Reel - TR | SOT3; TO-252 (DPAK); DPAK+ | Dpak | TO-3 |
| Packing Method | Reel - TR | Tape Reel; Reel - TR |
