Toshiba Corporation MOSFETs TJ8S06M3L

Description
MOSFET P-Ch 8A DPAK-3
  • MOSFETs - 1712492 - RS Components, Ltd.
    RS Components, Ltd.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TJ8S06M3L - 212848-TJ8S06M3L - Win Source Electronics
    Win Source Electronics
  • Mosfet, P-Ch, -10V, -8A, To-252; Transistor Polarity Toshiba - 78Y6743 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET P-Ch 8A DPAK-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 1712492 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1712492
MOSFETs 1712492
MOSFET P-Ch 8A DPAK-3

MOSFET P-Ch 8A DPAK-3

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TJ8S06M3L - 212848-TJ8S06M3L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TJ8S06M3L
212848-TJ8S06M3L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TJ8S06M3L 212848-TJ8S06M3L
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212848-TJ8S06M3L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: DPAK+ Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 890pF @ 10V Maximum Gate-Source Voltage: +10V, -20V Maximum Rds On at Id,Vgs: 104 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212848-TJ8S06M3L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: DPAK+
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 890pF @ 10V
Maximum Gate-Source Voltage: +10V, -20V
Maximum Rds On at Id,Vgs: 104 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 8A DPAK MOSFET Transistor
285-TJ8S06M3L
60V 8A DPAK MOSFET Transistor 285-TJ8S06M3L
MOSFET P-CH 60V 8A DPAK-3 Product overview: TJ8S06M3L from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TJ8S06M3L can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 8A DPAK-3 Product overview: TJ8S06M3L from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TJ8S06M3L can be used for catalog matching and distributor lookup.

Supplier's Site
Mosfet, P-Ch, -10V, -8A, To-252; Transistor Polarity Toshiba - 78Y6743 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -10V, -8A, To-252; Transistor Polarity Toshiba
78Y6743
Mosfet, P-Ch, -10V, -8A, To-252; Transistor Polarity Toshiba 78Y6743
MOSFET, P-CH, -10V, -8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes

MOSFET, P-CH, -10V, -8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  RS Components, Ltd. Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1712492 212848-TJ8S06M3L 285-TJ8S06M3L 78Y6743
Product Name MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TJ8S06M3L 60V 8A DPAK MOSFET Transistor Mosfet, P-Ch, -10V, -8A, To-252; Transistor Polarity Toshiba
Polarity P-Channel P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement
Package Type Dpak SOT3; TO-252 (DPAK); DPAK+ Reel - TR TO-3
Number of units in IC 1
V(BR)DSS 60 volts
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