Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6N7002KFU,LF SSM6N7002KFU,LF

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1102328-SSM6N7002KFU,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: US6
Maximum Power Dissipation: 285mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 300mA
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 40pF @ 10V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 100mA, 10V
Alternative Parts (Cross-Reference): NTJD5121NT1G; Si1926DL; Si1926DL-T1-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Mosfet Array 2 N-Channel (Dual) 60V 300mA 285mW Surface Mount US6

Mosfet Array 2 N-Channel (Dual) 60V 300mA 285mW Surface Mount US6

Mosfet Array 2 N-Channel (Dual) 60V 300mA 285mW Surface Mount US6

MOSFET 2N-CH 60V 0.3A US6 Product overview: SSM6N7002KFU,LF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SSM6N7002KFU,LF can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 0.3A