Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6N7002BFU,LF SSM6N7002BFU,LF

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 030890-SSM6N7002BFU,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: US6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA
Gate-Source Threshold Voltage: 3.1V @ 250μA
Max Input Capacitance: 17pF @ 25V
Maximum Rds On at Id,Vgs: 2.1 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Mosfet Array 2 N-Channel (Dual) 60V 200mA 300mW Surface Mount US6

MOSFET 2N-CH 60V 0.2A US6 Product overview: SSM6N7002BFU,LF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SSM6N7002BFU,LF can be used for catalog matching and distributor lookup.